Mechano-magnetic and ion-beam influence on Si-based films for memory and switching devices

Abstract

Thin films deposited on silicon are the building blocks of memory devices starting from memristors to MRAM. The phenomena occurring on the surface and interface can be influenced by external stimuli like temperature, pressure, ion beam irradiation, etc. A study focusing on the different aspects like hysteresis and defect-generated conducting paths along with super Para magnetism and exchange bias have been done on Si and films deposited on Si for memory devices. Th ion irradiation on Si showed energy recoils and related phenomena useful for the fabrication of memristor devices.