Preprint / Version 1

A 2-D Subthreshold Analytical Model for Short Channel Effects in Nanowire MOSFETs (Si, Ge)

##article.authors##

  • Gaurav Mahajan Apple Inc.
  • Rakhi Narang
  • Manoj Saxena
  • V.K. Chaubey

DOI:

https://doi.org/10.31224/7486

Keywords:

Nanowire MOSFET, Gate-All-Around MOSFET, Short Channel Effects, Subthreshold Current, Subthreshold Slope, Threshold Voltage Roll-Off, Device Modeling, Analytical Modeling, Semiconductor Devices, TCAD Simulation, CMOS Scaling, Nanoelectronics

Abstract

The present analysis proposes a 2D analytical model of potential and current for Nanowire MOSFETs in the subthreshold region for a moderately doped channel. The analytical expression for subthreshold current has been used to investigate the short channel parameters such as threshold voltage roll off and subthreshold slope. The model has been validated for Silicon and Germanium Nanowire MOSFETs by verifying the analytical results obtained with simulated results using Device3D.

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Posted

2026-07-01

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Copyright (c) 2026 Gaurav Mahajan, Rakhi Narang, Manoj Saxena, V.K. Chaubey

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This work is licensed under a Creative Commons Attribution 4.0 International License.